10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 1 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit flow npc 0 650 v / 75 a threelevel topology high efficient with latest chip technology low inductive package solar 10pz07nia075s5p926f53y flow 0 12mm housing schematic features target applications types buck switch collectoremitter voltage v ces 650 v collector current i c t j = t jmax t s = 80 c 62 a repetitive peak collector current i crm t p limited by t jmax 225 a total power dissipation p tot t j = t jmax t s = 80 c 86 w gateemitter voltage v ges 20 v maximum junction temperature t jmax 175 c
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 2 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit buck diode peak repetitive reverse voltage v rrm 650 v continuous (direct) forward current i f t j = t jmax t s = 80 c 59 a repetitive peak forward current i frm 150 a total power dissipation p tot t j = t jmax t s = 80 c 78 w maximum junction temperature t jmax 175 c boost switch collectoremitter voltage v ces 650 v collector current i c t j = t jmax t s = 80 c 89 a repetitive peak collector current i crm t p limited by t jmax 225 a total power dissipation p tot t j = t jmax t s = 80 c 99 w gateemitter voltage v ges 20 v maximum junction temperature t jmax 175 c boost diode peak repetitive reverse voltage v rrm 650 v continuous (direct) forward current i f t j = t jmax t s = 80 c 50 a repetitive peak forward current i frm 100 a total power dissipation p tot t j = t jmax t s = 80 c 64 w maximum junction temperature t jmax 175 c boost sw. protection diode peak repetitive reverse voltage v rrm 650 v continuous (direct) forward current i f t j = t jmax t s = 80 c 48 a repetitive peak forward current i frm 100 a total power dissipation p tot t j = t jmax t s = 80 c 70 w maximum junction temperature t jmax 175 c
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 3 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit module properties thermal properties storage temperature t stg 40+125 c operation temperature under switching condition t jop 40( t jmax 25) c isolation properties isolation voltage v isol dc test voltage t p = 2 s 4000 v creepage distance min. 12,7 mm clearance 9 mm comparative tracking index cti > 200
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 4 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max buck switch static gateemitter threshold voltage v ge(th) v ge = v ce 0,00075 25 3,2 4 4,8 v collectoremitter saturation voltage v cesat 15 75 25 1,42 1,75 v 125 1,55 collectoremitter cutoff current i ces 0 650 25 50 a gateemitter leakage current i ges 20 0 25 100 na internal gate resistance r g none input capacitance c ies f = 1 mhz 0 25 25 4500 pf output capacitance c oes 130 reverse transfer capacitance c res 17 gate charge q g 15 520 75 25 164 nc thermal thermal resistance junction to sink r th(j-s) phasechange material = 3,4 w/mk 1,11 k/w buck diode static forward voltage v f 75 25 1,53 1,77 v 125 1,49 150 1,47 reverse leakage current i r 650 25 3,8 a thermal thermal resistance junction to sink r th(j-s) phasechange material = 3,4 w/mk 1,23 k/w
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 5 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max boost switch static gateemitter threshold voltage v ge(th) v ge = v ce 0,001 25 4,2 5 5,8 v collectoremitter saturation voltage v cesat 15 75 25 1,05 1,45 v collectoremitter cutoff current i ces 0 650 25 40 a gateemitter leakage current i ges 20 0 25 100 na internal gate resistance r g none input capacitance c ies f = 1 mhz 0 25 25 11625 pf reverse transfer capacitance c res 30 thermal thermal resistance junction to sink r th(j-s) phasechange material = 3,4 w/mk 0,96 k/w boost diode static forward voltage v f 50 25 1,35 1,77 v 125 1,32 150 1,28 reverse leakage current i r 650 25 2,65 a thermal thermal resistance junction to sink r th(j-s) phasechange material = 3,4 w/mk 1,48 k/w boost sw. protection diode static forward voltage v f 50 25 1,63 1,9 v 125 1,54 reverse leakage current i r 650 25 27 a thermal thermal resistance junction to sink r th(j-s) phasechange material = 3,4 w/mk 1,36 k/w
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 6 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max thermistor rated resistance r 25 22 k deviation of r 100 r/r r 100 = 1484 100 5 5 % power dissipation p 25 5 mw power dissipation constant 25 1,5 mw/ k bvalue b (25/50) tol. 1 % 25 3962 k bvalue b (25/100) tol. 1 % 25 4000 k vincotech ntc reference i
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 7 copyright vincotech date code ul & vin lot serial wwyy ul vin lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 33,6 0 g12 2 30,8 0 s12 3 22 0 dc 4 19,2 0 dc 5 10,1 0 gnd 6 2,8 0 s14 7 0 0 g14 8 0 7,1 ph 9 0 9,9 ph 10 0 12,7 ph 11 0 15,5 ph 12 0 22,6 g13 13 2,8 22,6 s13 14 10,1 22,6 gnd 15 19,2 22,6 dc+ 16 22 22,6 dc+ 17 30,8 22,6 s11 18 33,6 22,6 g11 19 33,6 14,8 therm1 20 33,6 8,2 therm2 21 22 ordering code & marking pin table [mm] name nnnnnnnnnnnnnnnnttttttvv outline text datamatrix version without thermal paste with pressfit pins 12mm hous ing not assembled not assembled ordering code 10pz07nia075s5p926f53y nn-nnnnnnnnnnnnnn ttttttvv wwyy ul vin lllll ssss
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 8 copyright vincotech 75 a boost switch boost diode 50 a boost sw. protection diode fwd 650 v thermistor id d43,d44 igbt fwd component rt thermistor d13,d14 fwd t11,t12 d11,d12 650 v 50 a 650 v t13,t14 igbt buck switch 75 a pinout buck diode identification comment 650 v voltage current function 650 v 75 a
10-PZ07NIA075S5-P926F53Y target datasheet 25 apr. 2016 / revision 1 9 copyright vincotech disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. packaging instruction standard packaging quantity (spq) 135 >spq standard |
